Semiconductor arrangement and method for making

ABSTRACT

A method for fabricating a semiconductor arrangement is provided. The method includes forming a first dielectric layer and forming a first semiconductive layer over the first dielectric layer. The first semiconductive layer is patterned to form a patterned first semiconductive layer. The first dielectric layer is patterned using the patterned first semiconductive layer to form a patterned first dielectric layer. A second semiconductive layer is formed over the patterned first dielectric layer and the patterned first semiconductive layer.

RELATED APPLICATION(S)

This application claims priority to U.S. Provisional Application62/773,335, titled “DIELECTRIC PATTERNING METHOD USING A SEMICONDUCTIVEHARD MASK” and filed on Nov. 30, 2018, which is incorporated herein byreference.

BACKGROUND

During semiconductor fabrication, different techniques are used toremove layers or portions of layers used in the building ofsemiconductor arrangements. One technique to remove layers or portionsof layers is etching. Etching is a process where an etchant, such as aliquid chemical, is applied to a layer or a portion of the layer that isto be removed. The layer or portion of the layer is often removed toexpose underlying layers or features, or to define a particular patternin the layer. The layer or portion of the layer to which the etchant isapplied has a particular etch selectivity relative to the etchant suchthat the layer or portion of the layer is removed or etched away by theetchant. Other portions of the layer that are not to be removed aregenerally covered by a photoresist or hard mask that is not susceptibleto the etchant or is susceptible to the etchant to a lesser degree. Theportions of the layer that are not to be removed are thus protected fromthe etchant by the photoresist or hard mask. Once the layer or portionof the layer is etched away, the photoresist or hard mask is removed toreveal the patterned layer or remaining portions of the layer that werenot etched away by the etchant.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying Figs. It is notedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale. In fact, the dimensions of the variousfeatures may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 1B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.1A is taken along line 1-1 of FIG. 1B.

FIG. 2A is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 2B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.2A is taken along line 2-2 of FIG. 2B.

FIG. 3A is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 3B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.3A is taken along line 3-3 of FIG. 3B.

FIG. 4A is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 4B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.4A is taken along line 4-4 of FIG. 4B.

FIG. 5A is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 5B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.5A is taken along line 5-5 of FIG. 5B.

FIG. 6A is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 6B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.6A is taken along line 6-6 of FIG. 6B.

FIG. 7 is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 8 is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 9A is a cross sectional illustration of a semiconductor arrangementat a stage of fabrication, in accordance with one or more embodiments.

FIG. 9B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.9A is taken along line 9-9 of FIG. 9B.

FIG. 10A is a cross sectional illustration of a semiconductorarrangement at a stage of fabrication, in accordance with one or moreembodiments.

FIG. 10B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.10A is taken along line 10-10 of FIG. 10B.

FIG. 11A is a cross sectional illustration of a semiconductorarrangement at a stage of fabrication, in accordance with one or moreembodiments.

FIG. 11B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.11A is taken along line 11-11 of FIG. 11B.

FIG. 12A is a cross sectional illustration of a semiconductorarrangement at a stage of fabrication, in accordance with one or moreembodiments.

FIG. 12B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.12A is taken along line 12-12 of FIG. 12B.

FIG. 13A is a cross sectional illustration of a semiconductorarrangement at a stage of fabrication, in accordance with one or moreembodiments.

FIG. 13B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.13A is taken along line 13-13 of FIG. 13B.

FIG. 14A is a cross sectional illustration of a semiconductorarrangement at a stage of fabrication, in accordance with one or moreembodiments.

FIG. 14B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.14A is taken along line 14-14 of FIG. 14B.

FIG. 15 is an illustration of a circuit schematic, in accordance withone or more embodiments.

FIG. 16A is a cross sectional illustration of a semiconductorarrangement at a stage of fabrication, in accordance with one or moreembodiments.

FIG. 16B is a top illustration of a semiconductor arrangement at a stageof fabrication, in accordance with one or more embodiments, where FIG.16A is taken along line 16-16 of FIG. 16B.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the Figs. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe Figs. The apparatus may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments relate to fabricating a semiconductor arrangement. Inaccordance with some embodiments, the fabrication includes forming afirst semiconductive layer over a first dielectric layer, patterning thefirst semiconductive layer to form a patterned first semiconductivelayer, and patterning the first dielectric layer using the patternedfirst semiconductive layer to form a patterned first dielectric layer.The pattern formed in the patterned first dielectric layer istransferred to one or more underlying layers in some embodiments.According to some embodiments, a negative of the pattern formed in thepatterned first dielectric layer is transferred to one or moreunderlying layers.

FIGS. 1A-16B illustrate a semiconductor arrangement 100 at variousstages of fabrication, in accordance with some embodiments.

Referring to FIG. 1A, the semiconductor arrangement 100 is formed over asubstrate 102. According to some embodiments, the substrate 102comprises at least one of an epitaxial layer, a silicon-on-insulator(SOI) structure, a wafer, or a die formed from a wafer. According tosome embodiments, one or more layers, structures, features, elements,etc. (not shown) are between the substrate 102 and the semiconductorarrangement 100.

According to some embodiments, the semiconductor arrangement 100comprises one or more dielectric features 402 a, 402 b, 402 c, 402 d,etc. and one or more conductive features 404 a, 404 b, 404 c, etc. Insome embodiments, at least some of the dielectric features compriseinterlayer dielectric (ILD). In some embodiments, at least some of thedielectric features comprise at least one of tetraethylorthosilicate(TEOS), borophosphosilicate glass (BPSG), fused silica glass (FSG),phosphosilicate glass (PSG), boron doped silicon glass (BSG), or othersuitable materials. In some embodiments, at least some of the conductivefeatures comprise a gate, such as of a transistor. In some embodiments,at least some of the conductive features comprise at least one of metal,doped polysilicon, or other suitable materials.

As illustrated in FIG. 1B, where FIG. 1A is a cross sectional view takenalong line 1-1 of FIG. 1B, the semiconductor arrangement 100 comprisesone or more dielectric plugs 401 a 1, 401 a 2, 401 b 1, 401 c 1, 401 c2, etc., according to some embodiments. In some embodiments, at leastsome of the dielectric plugs comprise at least one of oxide, nitride, orother suitable materials. In some embodiments, at least some of thedielectric plugs separate or electrically isolate portions of theconductive features from one another. In some embodiments, 401 a 1separates 404 a 1 from 404 a 2, 401 a 2 separates 404 a 2 from 404 a 3,401 b 1 separates 404 b 1 from 404 b 2, 401 c 1 separates 404 c 1 from404 c 2, and 401 c 2 separates 404 c 2 from 404 c 3. In someembodiments, where one or more of the conductive features comprisegates, such as for finFET transistors, the dielectric plugs make thegates discontinuous so that some portions of the gates are notelectrically coupled to other portions of the gates.

Referring to FIG. 2A and FIG. 1B, where FIG. 2A is a cross sectionalview taken along line 2-2 of FIG. 2B, the semiconductor arrangement 100comprises at least one of a first dielectric layer 104, a metal layer106, a second dielectric layer 108, a third dielectric layer 110, or afirst semiconductive layer 112 over the dielectric features 402 a, 402b, 402 c, 402 d and the conductive features 404 a, 404 b, 404 c,according to some embodiments. In some embodiments, the first dielectriclayer 104 is in direct contact with at least one of at least some of thedielectric features 402 a, 402 b, 402 c, 402 d or at least some of theconductive features 404 a, 404 b, 404 c.

According to some embodiments, the first dielectric layer 104 is an ILDlayer. In some embodiments, the first dielectric layer 104 comprises atleast one of tetraethylorthosilicate (TEOS), borophosphosilicate glass(BPSG), fused silica glass (FSG), phosphosilicate glass (PSG), borondoped silicon glass (BSG), or other suitable materials. In someembodiments, the first dielectric layer 104 is formed by at least one ofphysical vapor deposition (PVD), sputtering, chemical vapor deposition(CVD), low pressure CVD (LPCVD), atomic layer chemical vapor deposition(ALCVD), ultrahigh vacuum CVD (UHVCVD), reduced pressure CVD (RPCVD),molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), or othersuitable techniques.

According to some embodiments, the metal layer 106 comprises at leastone of tungsten, carbide, or other suitable materials. According to someembodiments, the metal layer 106 comprises metal but has little to noelectrical conductivity. According to some embodiments, the metal layer106 is formed by at least one of PVD, sputtering, CVD, LPCVD, ALCVD,UHVCVD, RPCVD, MBE, LPE, or other suitable techniques. In someembodiments, the metal layer 106 is in direct contact with the firstdielectric layer 104.

According to some embodiments, the second dielectric layer 108 comprisesat least one of oxide or other suitable materials. According to someembodiments, the second dielectric layer 108 has different compositionthan the first dielectric layer 104. According to some embodiments, thesecond dielectric layer 108 has a same composition as the firstdielectric layer 104. According to some embodiments, the seconddielectric layer 108 is formed by at least one of PVD, sputtering, CVD,LPCVD, ALCVD, UHVCVD, RPCVD, MBE, LPE, or other suitable techniques. Insome embodiments, the second dielectric layer 108 is in direct contactwith the metal layer 106.

According to some embodiments, the third dielectric layer 110 comprisesat least one of oxide, nitride, silicon nitride (SiN), or other suitablematerials. According to some embodiments, the third dielectric layer 110has a different composition than the first dielectric layer 104.According to some embodiments, the third dielectric layer 110 has a samecomposition as the first dielectric layer 104. According to someembodiments, the third dielectric layer 110 has a different compositionthan the second dielectric layer 108. According to some embodiments, thethird dielectric layer 110 has a same composition as the seconddielectric layer 108. According to some embodiments, the thirddielectric layer 110 is formed by at least one of PVD, sputtering, CVD,LPCVD, ALCVD, UHVCVD, RPCVD, MBE, LPE, or other suitable techniques. Insome embodiments, the third dielectric layer 110 is in direct contactwith the second dielectric layer 108.

According to some embodiments, the first semiconductive layer 112comprises at least one of silicon (Si) or other suitable materials.According to some embodiments, the first semiconductive layer 112 isformed by at least one of PVD, sputtering, CVD, LPCVD, ALCVD, UHVCVD,RPCVD, MBE, LPE, or other suitable techniques. In some embodiments, thefirst semiconductive layer 112 is in direct contact with the thirddielectric layer 110.

Referring to FIG. 3A and FIG. 3B, where FIG. 3A is a cross sectionalview taken along line 3-3 of FIG. 3B, a photoresist layer 114 is formedover the semiconductive layer 112 and patterned such that a firstportion 114 a of the photoresist layer 114, a second portion 114 b ofthe photoresist layer 114, a third portion 114 c of the photoresistlayer 114, a fourth portion 114 d of the photoresist layer 114, and afifth portion 114 e of the photoresist layer 114 remain over the firstsemiconductive layer 112, according to some embodiments. According tosome embodiments, the photoresist layer 114 comprises a light-sensitivematerial such that properties, such as solubility, of the photoresistlayer 114 are affected by light. The photoresist layer 114 is either anegative photoresist or a positive photoresist. With respect to anegative photoresist, regions of the negative photoresist becomeinsoluble when illuminated by a light source such that application of asolvent to the negative photoresist during a subsequent developmentstage removes non-illuminated regions of the negative photoresist. Apattern formed in the negative photoresist is thus a negative of apattern defined by opaque regions of a template between the light sourceand the negative photoresist. In a positive photoresist, illuminatedregions of the positive photoresist become soluble and are removed viaapplication of a solvent during development. Thus, a pattern formed inthe positive photoresist is a positive image of opaque regions of thetemplate between the light source and the positive photoresist.

In some embodiments, the photoresist layer 114 comprises multiple layers(not shown). According to some embodiments, the photoresist layer 114comprises three layers: a top layer, a middle layer under the top layer,and a bottom layer under the middle layer. In some embodiments, the toplayer comprises a light sensitive material as described above. In someembodiments, the middle layer comprises an anti-reflective material toaid in at least one of exposure or focus of processing the lightsensitive material. In some embodiments, the bottom layer comprises ahard mask material, such as at least one of nitride or other suitablematerials. In some embodiments, the photoresist layer 114 is in directcontact with the first semiconductive layer 112.

FIG. 4A and FIG. 4B illustrate the pattern in the photoresist layer 114(of FIG. 3A and FIG. 3B) transferred to the first semiconductive layer112 to form a patterned semiconductive layer, where FIG. 4A is a crosssectional view taken along line 4-4 of FIG. 4B, such that the patternedsemiconductive layer comprises a first portion 112 a of the firstsemiconductive layer 112, a second portion 112 b of the firstsemiconductive layer 112, and a third portion 112 c of the firstsemiconductive layer 112, according to some embodiments. According tosome embodiments, an etching process is performed to pattern the firstsemiconductive layer 112, where the first portion 114 a (of FIG. 3A andFIG. 3B) of the photoresist layer 114 protects or shields the firstportion 112 a of the first semiconductive layer 112 from an etchantapplied during the etching process, the second portion 114 b (of FIG. 3Aand FIG. 3B) of the photoresist layer 114 protects or shields the secondportion 112 b of the first semiconductive layer 112 from the etchantapplied during the etching process, and the third portion 114 c (of FIG.3A and FIG. 3B) of the photoresist layer 114 protects or shields thethird portion 112 c of the first semiconductive layer 112 from theetchant applied during the etching process. Portions of the firstsemiconductive layer 112 not covered by the photoresist layer 114 areexposed to the etchant and are removed or etched away during the etchingprocess to expose portions of the third dielectric layer 110. Thepatterned photoresist layer 114 is then washed away, stripped, orotherwise removed. According to some embodiments, the etchant used topattern the first semiconductive layer 112 is at least one of chlorine,hydrogen bromide, or other suitable chemicals.

As illustrated in FIG. 4A and FIG. 4B, a second photoresist layer 202 isformed over the patterned first semiconductive layer 112 a, 112 b, 112 cand exposed portions of the third dielectric layer 110, in someembodiments. According to some embodiments, the second photoresist layer202 is patterned such that a first portion 202 a of the secondphotoresist layer 202 covers all of the first portion 112 a of the firstsemiconductive layer 112, a second portion 202 b of the secondphotoresist layer 202 covers all of the second portion 112 b of thefirst semiconductive layer 112, but a third portion 202 c of the secondphotoresist layer 202 covers some but not all of the third portion 112 cof the first semiconductive layer 112.

FIG. 5A and FIG. 5B illustrates the semiconductor arrangement 100 aftera second etching process is performed and the patterned secondphotoresist layer 202 is washed away, stripped, or otherwise removed,according to some embodiments, where FIG. 5A is a cross sectional viewtaken along line 5-5 of FIG. 5B. Given that the first portion 202 a (ofFIG. 4A) of the second photoresist layer 202 covered all of the firstportion 112 a of the first semiconductive layer 112, all of the firstportion 112 a of the first semiconductive layer 112 remains after thesecond etching process. Given that the second portion 202 b (of FIG. 4A)of the second photoresist layer 202 covered all of the second portion112 b of the first semiconductive layer 112, all of the second portion112 b of the first semiconductive layer 112 remains after the secondetching process. FIG. 5B also illustrates a fourth portion 112 d of thefirst semiconductive layer 112 and a fifth portion 112 e of the firstsemiconductive layer 112 that remain after the first etching process andthat were similarly covered and protected by the second photoresistlayer 202 during the second etching process. However, given that thethird portion 202 c (of FIG. 4A) of the second photoresist layer 202covered some but not all of the third portion 112 c of the firstsemiconductive layer 112, merely some of the third portion 112 c of thefirst semiconductive layer 112 remains after the second etching process.The part of the third portion 112 c of the first semiconductive layer112 that was not covered by the third portion 202 c of the secondphotoresist layer 202 is removed or etched away by an etchant that isapplied during the second etching process such that the third portion112 c of the first semiconductive layer 112 has a first cross-sectionalprofile before the second etching process and a second cross-sectionalprofile after the second etching process. According to some embodiments,a dimension, such as width, depth, etc., of the third portion 112 c ofthe first semiconductive layer 112 is different in the firstcross-sectional profile as compared to the second cross-sectionalprofile. According to some embodiments, the multiple patterning actions,such as to alter the third portion 112 c of the first semiconductivelayer 112 is, at times, referred to as double patterning.

According to some embodiments, portions of the third dielectric layer110 not covered by the second photoresist layer 202 are exposed to theetchant during the second etching process such that a first recess 302and a second recess 304 are formed in the third dielectric layer 110. Insome embodiments, limitations associated with photolithography requireone or more patterning operations to be performed to achieve a desireddimension, shape, etc. of a feature, such as that of the third portion112 c of the first semiconductive layer 112 after the second etchingprocess is performed. According to some embodiments, one or moresubsequent patterning and etching operations, in addition to what isillustrated and described with regard to the patterned first photoresistlayer 114 of FIG. 3A and FIG. 3B and the patterned second photoresistlayer 202 of FIG. 2A and FIG. 2B, are required to achieve the desireddimension, shape, etc. of a feature. According to some embodiments, thethird dielectric layer 110 is formed to have a thickness such that anyrecess(es) formed in the third dielectric layer 110 due to one or morepatterning and etching operations do not expose the second dielectriclayer 108. According to some embodiments, a lack of exposure of thesecond dielectric layer 108 to one or more etchants, such as O₂ or acarbon-rich gas in a dry etching process, inhibits stitching in thesecond dielectric layer 108. According to some embodiments, stitchingcorresponds to one or more recesses being formed in the seconddielectric layer 108, such as where the first recess 302 is transferredto the second dielectric layer 108. According to some embodiments,inhibiting the formation of one or more recesses in the seconddielectric layer 108 promotes a desired composition of the seconddielectric layer 108, such as by not providing a location, such as arecess, for undesired materials to be deposited or otherwise accumulatewithin the second dielectric layer 108. Having a desired composition ofthe second dielectric layer 108 promotes desired operation of a devicecomprising the semiconductor arrangement 100.

FIG. 6A and FIG. 6B illustrate the pattern in the patterned firstsemiconductive layer 112 transferred to the third dielectric layer 110to form a patterned third dielectric layer, wherein FIG. 6A is a crosssectional view taken along line 6-6 of FIG. 6B, such that the patternedthird dielectric layer comprises a first portion 110 a of the thirddielectric layer 110, a second portion 110 b of the third dielectriclayer 110, and a third portion 110 c of the third dielectric layer 110,according to some embodiments. According to some embodiments, an etchingprocess is performed to pattern the third dielectric layer 110, wherethe first portion 112 a of the first semiconductive layer 112 protectsor shields the first portion 110 a of the third dielectric layer 110from an etchant applied during the etching process, the second portion112 b of the first semiconductive layer 112 protects or shields thesecond portion 110 b of the third dielectric layer 110 from the etchantapplied during the etching process, and the third portion 112 c of thefirst semiconductive layer 112 protects or shields the third portion 110c of the third dielectric layer 110 from the etchant applied during theetching process. According to some embodiments, the fourth portion 112 dof the first semiconductive layer 112 protects or shields a fourthportion (not shown) of the third dielectric layer 110 and the fifthportion 112 e of the first semiconductive layer 112 protects or shieldsa fifth portion (not shown) of the third dielectric layer 110. Portionsof the third dielectric layer 110 not covered by the firstsemiconductive layer 112 are exposed to the etchant and are removed oretched away during the etching process to expose portions of the seconddielectric layer 108. According to some embodiments, the etchant used toetch the third dielectric layer 110 is selective such that the etchantdoes not etch the second dielectric layer 108. According to someembodiments, the etchant used to pattern the third dielectric layer 110is at least one of carbon-rich gas, O₂, or other suitable chemicals.

As will be appreciated from the disclosure herein, implementing thefirst semiconductive layer 112 facilitates forming features, elements,etc. that have desired profiles, such as substantially verticalsidewalls, according to some embodiments. By way of example, if thethird dielectric layer 110 is patterned in the absence of the firstsemiconductive layer 112, sidewalls of the third dielectric layer 110are tapered or not sufficiently vertical. If, for example, the thirddielectric layer 110 comprises SiN and a patterned photoresist isimplemented to pattern the third dielectric layer 110, an etchant usedto pattern the third dielectric layer 110 also etches the patternedphotoresist, such as laterally where O₂ of the etchant consumes a bottomlayer or portion of the photoresist. The patterned photoresist thus hasat least one of a smaller dimension than desired or a tapered ornon-liner sidewall, which is transferred to the third dielectric layer110. Such etching techniques include, for example, implementing at leastone of a high bias, a polymer lean gas, a carbon-rich gas, or O₂.Implementing a high bias or a polymer lean gas, for example, results institching or undesired removal of at least one of some of the seconddielectric layer 108 and thus an undesired recess in the seconddielectric layer 108, where unwanted residue accumulates in the recess.Implementing a carbon-rich gas or O₂, for example, in the absence of thefirst semiconductive layer 112 results in the aforementioned taperedprofile of the photoresist and third dielectric layer 110. Implementingthe first semiconductive layer 112 allows an etching process to beimplemented where the first portion 110 a, the second portion 110 b, thethird portion 110 c, the fourth portion, and the fifth portion of thethird dielectric layer 110 have substantially vertical sidewalls.According to some embodiments, an etch selectivity of the firstsemiconductive layer 112 relative to an etchant, such as a carbon-richgas or O₂, allows at least one of an amount or composition of etchant tobe used to etch the third dielectric layer 110 such that the firstportion 110 a, the second portion 110 b, the third portion 110 c, thefourth portion, and the fifth portion of the third dielectric layer 110have substantially vertical sidewalls, while also inhibiting unwantedside effects of the etching process. According to some embodiments, thepatterned semiconductive layer 112 acts as hardmasks for the thirddielectric layer 110.

FIG. 7 illustrates a fourth dielectric layer 502 formed over the firstportion 112 a of the first semiconductive layer 112, the first portion110 a of the third dielectric layer 110, the second portion 112 b of thefirst semiconductive layer 112, the second portion 110 b of the thirddielectric layer 110, the third portion 112 c of the firstsemiconductive layer 112, the third portion 110 c of the thirddielectric layer 110, and the second dielectric layer 108, according tosome embodiments. In some embodiments, the fourth dielectric layer 502is conformal so as to form on at least one of a sidewall of the firstportion 112 a of the first semiconductive layer 112, a sidewall of thefirst portion 110 a of the third dielectric layer 110, a sidewall of thesecond portion 112 b of the first semiconductive layer 112, a sidewallof the second portion 110 b of the third dielectric layer 110, asidewall of the third portion 112 c of the first semiconductive layer112, or a sidewall of the third portion 110 c of the third dielectriclayer 110, as well as on at least one of a top surface of the firstportion 112 a of the first semiconductive layer 112, a top surface ofthe second portion 112 b of the first semiconductive layer 112, a topsurface of the third portion 112 c of the first semiconductive layer112, or an exposed portion of the second dielectric layer 108. Accordingto some embodiments, the fourth dielectric layer 502 has a uniformthickness. According to some embodiments, the fourth dielectric layer502 comprises at least one of oxide, nitride, silicon nitride (SiN), orother suitable materials. According to some embodiments, the fourthdielectric layer 502 has a different composition than the firstdielectric layer 104. According to some embodiments, the fourthdielectric layer 502 has a same composition as the first dielectriclayer 104. According to some embodiments, the fourth dielectric layer502 has a different composition than the second dielectric layer 108.According to some embodiments, the fourth dielectric layer 502 has asame composition as the second dielectric layer 108. According to someembodiments, the fourth dielectric layer 502 has a different compositionthan the third dielectric layer 110. According to some embodiments, thefourth dielectric layer 502 has a same composition as the thirddielectric layer 110. According to some embodiments, the fourthdielectric layer 502 is formed by at least one of PVD, sputtering, CVD,LPCVD, ALCVD, UHVCVD, RPCVD, MBE, LPE, or other suitable techniques. Insome embodiments, the fourth dielectric layer 502 is in direct contactwith at least one of the first portion 112 a of the first semiconductivelayer 112, the first portion 110 a of the third dielectric layer 110,the second portion 112 b of the first semiconductive layer 112, thesecond portion 110 b of the third dielectric layer 110, or the seconddielectric layer 108.

FIG. 8 illustrates some of the fourth dielectric layer 502 removed,according to some embodiments. In some embodiments, at least onevertical portion 502 a, 502 b, 502 c, or 502 d of the fourth dielectriclayer 502 remains on at least one of a sidewall of the first portion 112a of the first semiconductive layer 112, a sidewall of the first portion110 a of the third dielectric layer 110, a sidewall of the secondportion 112 b of the first semiconductive layer 112, a sidewall of thesecond portion 110 b of the third dielectric layer 110, a sidewall ofthe third portion 112 c of the first semiconductive layer 112, or asidewall of the third portion 110 c of the third dielectric layer 110.According to some embodiments, an etching process is performed to removesome of the fourth dielectric layer 502. In some embodiments, theetching process comprises at least one of a plasma etching process, areactive ion etching (RIE) process, a wet etching process, or othersuitable techniques. In some embodiments, the etching process utilizesat least one of CF₄, Cl₂, CHF₃, or other suitable materials.

Referring to FIG. 9A and FIG. 9B, where FIG. 9A is a cross sectionalview taken along line 9-9 of FIG. 9B, a second semiconductive layer 702formed over the first portion 112 a of the first semiconductive layer112, the second portion 112 b of the first semiconductive layer 112, thethird portion 112 c of the first semiconductive layer 112, the verticalportion 502 a of the fourth dielectric layer 502, the vertical portion502 b of the fourth dielectric layer 502, the vertical portion 502 c ofthe fourth dielectric layer 502, the vertical portion 502 d of thefourth dielectric layer 502, and the second dielectric layer 108,according to some embodiments. According to some embodiments, the secondsemiconductive layer 702 comprises at least one of Si or other suitablematerials. In some embodiments, the second semiconductive layer 702 hasa different composition than the first semiconductive layer 112. In someembodiments, the second semiconductive layer 702 has a same compositionas the first semiconductive layer 112. According to some embodiments,the second semiconductive layer 702 is formed by at least one of PVD,sputtering, CVD, LPCVD, ALCVD, UHVCVD, RPCVD, MBE, LPE, or othersuitable techniques. In some embodiments, the second semiconductivelayer 702 is in direct contact with at least one of the first portion112 a of the first semiconductive layer 112, the second portion 112 b ofthe first semiconductive layer 112, the third portion 112 c of the firstsemiconductive layer 112, the vertical portion 502 a of the fourthdielectric layer 502, the vertical portion 502 b of the fourthdielectric layer 502, the vertical portion 502 c of the fourthdielectric layer 502, the vertical portion 502 d of the fourthdielectric layer 502, or the second dielectric layer 108.

Referring to FIG. 10A and FIG. 10B, where FIG. 10A is a cross sectionalview taken along line 10-10 of FIG. 10B, at least some of the secondsemiconductive layer 702, some of the vertical portion 502 a of thefourth dielectric layer 502, some of the vertical portion 502 b of thefourth dielectric layer 502, some of the vertical portion 502 c of thefourth dielectric layer 502, some of the vertical portion 502 d of thefourth dielectric layer 502, the first portion 112 a of the firstsemiconductive layer 112, the second portion 112 b of the firstsemiconductive layer 112, and the third portion 112 c of the firstsemiconductive layer 112 are removed, according to some embodiments.According to some embodiments, the removal is performed by at least oneof CMP or other suitable techniques. In some embodiments, an uppermostsurface of at least two of remaining portion 702 a of the secondsemiconductive layer 702, remaining portion 702 b of the secondsemiconductive layer 702, remaining portion 702 c of the secondsemiconductive layer 702, remaining portion 702 d of the secondsemiconductive layer 702, the vertical portion 502 a of the fourthdielectric layer 502, the vertical portion 502 b of the fourthdielectric layer 502, the vertical portion 502 c of the fourthdielectric layer 502, the vertical portion 502 d of the fourthdielectric layer 502, the first portion 110 a of the third dielectriclayer 110, the second portion 110 b of the third dielectric layer 110,the third portion 110 c of the third dielectric layer 110, a fourthportion 110 d of the third dielectric layer 110, or a fifth portion 110e of the third dielectric layer 110 are coplanar after the removal.

Referring to FIG. 11A and FIG. 11B, where FIG. 11A is a cross sectionalview taken along line 11-11 of FIG. 11B, the vertical portion 502 a ofthe fourth dielectric layer 502, the vertical portion 502 b of thefourth dielectric layer 502, the vertical portion 502 c of the fourthdielectric layer 502, the vertical portion 502 d of the fourthdielectric layer 502, the first portion 110 a of the third dielectriclayer 110, the second portion 110 b of the third dielectric layer 110,and the third portion 110 c of the third dielectric layer 110 areremoved, according to some embodiments. A patterned secondsemiconductive layer comprising the remaining portion 702 a of thesecond semiconductive layer 702, the remaining portion 702 b of thesecond semiconductive layer 702, the remaining portion 702 c of thesecond semiconductive layer 702, and the remaining portion 702 d of thesecond semiconductive layer 702 remains after the removal, according tosome embodiments. According to some embodiments, a recess 902 a isdefined between the remaining portion 702 a of the second semiconductivelayer 702 and the remaining portion 702 b of the second semiconductivelayer 702. According to some embodiments, a recess 902 b is definedbetween the remaining portions 702 a, 702 b of the second semiconductivelayer 702 and the remaining portion 702 c of the second semiconductivelayer 702. According to some embodiments, a recess 902 c is definedbetween the remaining portions 702 a, 702 b of the second semiconductivelayer 702 and the remaining portion 702 d of the second semiconductivelayer 702. In some embodiments, the removal is performed by an etchingprocess. According to some embodiments, the etching process is at leastone of a plasma etching process, a RIE process, a wet etching process,or other suitable techniques. In some embodiments, the etching processutilizes at least one of CF₄, Cl₂, CHF₃, or other suitable materials. Insome embodiments, one or more of the sidewalls of 702 a, 702 b, 702 c,702 d that define the recesses are substantially vertical. In someembodiments, at least some of the aforementioned sidewalls aresubstantially vertical due to at least one of the selectively of theetchant of the etching process or a directionality of the etchingprocess.

Referring to FIG. 12A and FIG. 12B, where FIG. 12A is a cross sectionalview taken along line 12-12 of FIG. 12B, the pattern in the patternedsecond semiconductive layer 702 a, 702 b, 702 c, 702 d is transferred tothe second dielectric layer 108 and the metal layer 106 to form apatterned second dielectric layer and a patterned metal layer, and thepatterned second semiconductive layer is removed, according to someembodiments. According to some embodiments, the patterned secondsemiconductive layer 702 a, 702 b, 702 c, 702 d is removed by at leastone of CMP or other suitable techniques. In some embodiments, thepatterned second dielectric layer comprises a first portion 108 a of thesecond dielectric layer 108, a second portion 108 b of the seconddielectric layer 108, a third portion 108 c of the second dielectriclayer 108, and a fourth portion 108 d of the second dielectric layer108. In some embodiments, the patterned metal layer comprises a firstportion 106 a of the metal layer 106, a second portion 106 b of themetal layer 106, a third portion (not shown) of the metal layer 106, anda fourth portion (not shown) of the metal layer 106. According to someembodiments, an etching process is performed to pattern at least one ofthe second dielectric layer 108 or the metal layer 106, where theportions 702 a, 702 b, 702 c, 702 d of the second semiconductive layer702 protect or shield the portions 108 a, 108 b, 108 c, 108 d of thesecond dielectric layer 108 from an etchant applied during the etchingprocess. Portions of the second dielectric layer 108 not covered by thesecond semiconductive layer 702 are exposed to the etchant and areremoved or etched away during the etching process to expose portions ofthe metal layer 106. Exposed portions of the metal layer 106 are thenexposed to the same etchant or a different etchant(s) and removed oretched away during the etching process. According to some embodiments, afirst recess 1002 a is defined between the first portion 108 a of thesecond dielectric layer 108 and the second portion 108 b of the seconddielectric layer 108 and between the first portion 106 a of the metallayer 106 and the second portion 106 b of the metal layer 106. Accordingto some embodiments, a second recess 1002 b is defined between the first108 a and second 108 b portions of the second dielectric layer 108 andthe third portion 108 c of the second dielectric layer 108 and betweenthe first 106 a and second 106 b portions of the metal layer 106 and thethird portion (not shown) of the metal layer 106. According to someembodiments, a third recess 1002 c is defined between the first 108 aand second 108 b portions of the second dielectric layer 108 and thefourth portion 108 d of the second dielectric layer 108 and between thefirst 106 a and second 106 b portions of the metal layer 106 and thefourth portion (not shown) of the metal layer 106. In some embodiments,in addition to the etching process(es) used, the substantially verticalsidewalls of 702 a, 702 b, 702 c, 702 d result in sidewalls of 108 a,108 b, 108 c, 108 d, 106 a, 106 b, 106 c (FIG. 13B), 106 d (FIG. 13B)that define the recesses 1002 a, 1002 b, 1002 c being substantiallyvertical.

Referring to FIG. 13A and FIG. 13B, where FIG. 13A is a cross sectionalview taken along line 13-13 of FIG. 13B, dielectric material is removed,such as the portions 108 a, 108 b, 108 c, 108 d of the second dielectriclayer 108, exposed portions of the first dielectric layer 104, some ofthe dielectric feature 402 a, and some of the dielectric feature 402 d,according to some embodiments. According to some embodiments, suchremoval occurs by way of at least one of etching or other suitabletechniques.

As illustrated in FIG. 13B, removal of the dielectric material exposesthe first portion 106 a of the metal layer 106, the second portion 106 bof the metal layer 106, the third portion 106 c of the metal layer 106,and the fourth portion 106 d of the metal layer 106, according to someembodiments. Removal of the dielectric material exposes portions 404 a1, 404 a 2, 404 a 3, 404 b 1, 404 b 2, 404 c 1, 404 c 2, and 404 c 3 ofthe conductive features that are not covered by the portions 106 a, 106b, 106 c, 106 d of the metal layer 106, according to some embodiments.Removal of the dielectric material exposes dielectric plugs 401 a 1, 401a 2, 401 b 1, 401 c 1, 401 c 2, according to some embodiments. Removalof the dielectric material exposes epitaxy regions 410 a 1, 410 a 2, 410b 1, 410 b 2, 410 c 1, 410 c 2, 410 d 1, 410 d 2, according to someembodiments. In some embodiments, an epitaxy region serves as a sourceor a drain or as a point for electrical contact to a source or a drainof a transistor, such as a finFET transistor. According to someembodiments, a fin of a finFET transistor underlies a conductivefeature, such as where the conductive feature operates as a gate of thefinFET transistor. According to some embodiments, the fin also underliesor is otherwise electrically connected to first and second epitaxyregions, such as where the first epitaxy region operates as a source oras a point for electrical contact to the source of the finFET transistorand where the second epitaxy region operates as a drain or as a pointfor electrical contact to the drain of the finFET transistor. Removal ofthe dielectric material exposes portions of the dielectric features 402a, 402 b, 402 c, 402 d not covered by at least one of the portions 106a, 106 b, 106 c, 106 d of the metal layer 106 or the epitaxy regions 410a 1, 410 a 2, 410 b 1, 410 b 2, 410 c 1, 410 c 2, 410 d 1, 410 d 2.

Referring to FIG. 14A and FIG. 14B, where FIG. 14A is a cross sectionalview taken along line 14-14 of FIG. 14B, the portions 106 a, 106 b, 106c, 106 d of the metal layer 106 are removed, such as by at least one ofCMP or other suitable techniques, and a conductive material 405 isformed over exposed features, elements, etc., according to someembodiments. In some embodiments, the conductive material 405 is metalsuch as copper or other suitable materials. According to someembodiments, the conductive material 405 is formed by at least one ofPVD, sputtering, CVD, LPCVD, ALCVD, UHVCVD, RPCVD, MBE, LPE, or othersuitable techniques. According to some embodiments, the conducivematerial 405 serves to electrically connect some conductive features,elements, etc.

By way of example, and not limitation, FIG. 15 is a schematic of astatic random-access memory (SRAM) circuit 450. The circuit 450comprises four transistors M1, M2, M4, M4. Gate G3 of transistor M3 andgate G4 of transistor M4 are connected to a word line (WL). Gate G1 oftransistor M1 is connected to drain D2 of transistor M2 and source S4 oftransistor M4. Gate G2 of transistor M2 is connected to drain D1 oftransistor M1 and source S3 of transistor M3. Drain D3 of transistor M3is connected to bit line bar (BLB) and drain D4 of transistor M4 isconnected to bit line (BL). Source S1 of transistor M1 is connected tosource S2 of transistor M2.

According to some embodiments, the conductive material 405 depicted inFIG. 14A and FIG. 14B makes at least one of the connection between drainD1 of transistor M1 and source S3 of transistor M3, the connectionbetween drain D2 of transistor M2 and source S4 of transistor M4, or theconnection between source S1 of transistor M1 and source S2 oftransistor M2. According to some embodiments, the conductive material405 depicted in FIG. 14A and FIG. 14B that makes such connections is, attimes, referred to as a metal drain (MD).

FIG. 14A and FIG. 14B illustrate that the conductive material 405 alsoelectrically couples conductive features 404 a, 404 b, 404 c to oneanother. In some embodiments, it is desirable to decouple orelectrically isolate some conductive features from one another, such as404 a, 404 b, 404 c.

Accordingly, referring to FIG. 16A and FIG. 16B, where FIG. 16A is across sectional view taken along line 16-16 of FIG. 16B, some of theconductive material 405, as well as remaining portions 104 a, 104 b ofthe first dielectric layer 104 are removed, according to someembodiments. In some embodiments, such removal occurs by way of at leastone of CMP or other suitable techniques. Given that the conductivematerial 405 is, at times, referred to as a metal drain, removal of someof the conductive material 405 to decouple a conductive feature from oneor more other conductive features is, at times, referred to as cut metaldrain (CMD). As illustrated in FIG. 16B some of the conductive material405 remains to electrically couple certain features, such as D1 to S3,D2 to S4, and S1 to S2 in the circuit 450 in FIG. 15 , according to someembodiments. According to some embodiments, portions 405 a 1, 405 a 2,405 a 3, 405 b 1, 405 b 2, 405 b 3, 405 b 4, 405 c 1, 405 c 2, 405 c 3,405 c 4, 405 d 1, 405 d 2, 405 d 3 of the conductive material 405remain. According to some embodiments, portion 405 a 2 couples epitaxyregions 410 a 1 and 410 a 2 (FIG. 13B) to one another. According to someembodiments, portion 405 d 2 couples epitaxy regions 410 d 1 and 410 d 2(FIG. 12B) to one another.

According to some embodiments, removal of some of the conductivematerial 405 and remaining portions of the first dielectric layer 104exposes portions 404 a 1, 404 a 2, 404 a 3, 404 b 1, 404 b 2, 404 c 1,404 c 2, and 404 c 3 of the conductive features. According to someembodiments, removal of some of the conductive material 405 andremaining portions of the first dielectric layer 104 exposes portions402 a 1, 402 a 2, 402 b 1, 402 b 2, 402 b 3, 402 c 1, 402 c 2, 402 c 3,402 d 1, and 402 d 2 of the dielectric features. According to someembodiments, the aforementioned substantially vertical sidewalls serveto develop features, elements, etc. that have desired dimensions. By wayof example, and not limitation, dimensions of 402 a 1 are sufficient toelectrically isolate 405 a 1 from 405 a 2. The same is true for thedimensions of at least one of 402 a 2, 402 b 1, 402 b 2, 402 b 3, 402 c1, 402 c 2, 402 c 3, 402 d 1, or 402 d 2 so as to be able toelectrically isolate or cut conductivity between adjacent or surroundingitems, such as at least two of 405 a 1, 405 a 2, 405 a 3, 405 b 1, 405 b2, 405 b 3, 405 b 4, 405 c 1, 405 c 2, 405 c 3, 405 c 4, 405 d 1, 405 d2, or 405 d 3, according to some embodiments.

Some embodiments described herein relate to fabricating a semiconductorarrangement. In accordance with some embodiments, the fabricationincludes forming a first semiconductive layer over a first dielectriclayer, patterning the first semiconductive layer to form a patternedfirst semiconductive layer, and patterning the first dielectric layerusing the patterned first semiconductive layer to form a patterned firstdielectric layer. The pattern formed in the patterned first dielectriclayer is transferred to one or more underlying layers in someembodiments. According to some embodiments, a negative of the patternformed in the patterned first dielectric layer is transferred to one ormore underlying layers. According to some embodiments, the fabricationproduces recesses defined by substantially vertical sidewalls. Features,elements, etc. formed in the recesses thus have substantially verticalor smooth sidewalls or profiles.

According to some embodiments, a method for fabricating a semiconductorarrangement is provided that includes forming a first dielectric layer,forming a first semiconductive layer over the first dielectric layer,patterning the first semiconductive layer to form a patterned firstsemiconductive layer, patterning the first dielectric layer using thepatterned first semiconductive layer to form a patterned firstdielectric layer, and forming a second semiconductive layer over thepatterned first dielectric layer and the patterned first semiconductivelayer.

According to some embodiments, a method for fabricating a semiconductorarrangement is provided that includes forming a silicon nitride layer,forming a silicon layer over the silicon nitride layer, and patterningthe silicon layer to form a recess in the silicon nitride layer and apatterned silicon layer comprising a first silicon structure and asecond silicon structure.

According to some embodiments, a method for fabricating a semiconductorarrangement is provided that includes forming a first dielectric layerover an oxide layer, forming a first semiconductive layer over the firstdielectric layer, performing a first etch to form a first semiconductivestructure and a second semiconductive structure from the firstsemiconductive layer, and performing a second etch to change across-sectional profile of the first semiconductive structure, where atleast one of the first etch or the second etch forms a recess in thefirst dielectric layer.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand various aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes or achieving the same advantages of variousembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

Although the subject matter has been described in language specific tostructural features or methodological acts, it is to be understood thatthe subject matter of the appended claims is not necessarily limited tothe specific features or acts described above. Rather, the specificfeatures and acts described above are disclosed as example forms ofimplementing at least some of the claims.

Various operations of embodiments are provided herein. The order inwhich some or all of the operations are described should not beconstrued to imply that these operations are necessarily orderdependent. Alternative ordering will be appreciated having the benefitof this description. Further, it will be understood that not alloperations are necessarily present in each embodiment provided herein.Also, it will be understood that not all operations are necessary insome embodiments.

It will be appreciated that layers, features, elements, etc. depictedherein are illustrated with particular dimensions relative to oneanother, such as structural dimensions or orientations, for example, forpurposes of simplicity and ease of understanding and that actualdimensions of the same differ substantially from that illustratedherein, in some embodiments. Additionally, a variety of techniques existfor forming the layers, regions, features, elements, etc. mentionedherein, such as at least one of etching techniques, planarizationtechniques, implanting techniques, doping techniques, spin-ontechniques, sputtering techniques, growth techniques, or depositiontechniques such as chemical vapor deposition (CVD), for example.

Moreover, “exemplary” is used herein to mean serving as an example,instance, illustration, etc., and not necessarily as advantageous. Asused in this application, “or” is intended to mean an inclusive “or”rather than an exclusive “or”. In addition, “a” and “an” as used in thisapplication and the appended claims are generally be construed to mean“one or more” unless specified otherwise or clear from context to bedirected to a singular form. Also, at least one of A and B and/or thelike generally means A or B or both A and B. Furthermore, to the extentthat “includes”, “having”, “has”, “with”, or variants thereof are used,such terms are intended to be inclusive in a manner similar to the term“comprising”. Also, unless specified otherwise, “first,” “second,” orthe like are not intended to imply a temporal aspect, a spatial aspect,an ordering, etc. Rather, such terms are merely used as identifiers,names, etc. for features, elements, items, etc. For example, a firstelement and a second element generally correspond to element A andelement B or two different or two identical elements or the sameelement.

Also, although the disclosure has been shown and described with respectto one or more implementations, equivalent alterations and modificationswill occur to others of ordinary skill in the art based upon a readingand understanding of this specification and the annexed drawings. Thedisclosure includes all such modifications and alterations and islimited only by the scope of the following claims. In particular regardto the various functions performed by the above described components theterms used to describe such components are intended to correspond,unless otherwise indicated, to any component which performs thespecified function of the described component (for example, a term thatis functionally equivalent), even though not structurally equivalent tothe disclosed structure. In addition, while a particular feature of thedisclosure may have been disclosed with respect to only one of severalimplementations, such feature may be combined with one or more otherfeatures of the other implementations as may be desired and advantageousfor any given or particular application.

What is claimed is:
 1. A method for fabricating a semiconductorarrangement, comprising: forming a first dielectric layer; forming afirst semiconductive layer over the first dielectric layer; patterningthe first semiconductive layer to form a patterned first semiconductivelayer; patterning the first dielectric layer using the patterned firstsemiconductive layer to form a patterned first dielectric layer; andforming a second semiconductive layer over the patterned firstdielectric layer and the patterned first semiconductive layer.
 2. Themethod of claim 1, wherein the first semiconductive layer and the secondsemiconductive layer have a same material composition.
 3. The method ofclaim 1, wherein patterning the first semiconductive layer comprises:performing a first etch to form a first semiconductive structure fromthe first semiconductive layer, wherein the first semiconductivestructure has a first cross-sectional profile; and performing a secondetch to change a cross-sectional profile of the first semiconductivestructure from the first cross-sectional profile to a secondcross-sectional profile.
 4. The method of claim 3, wherein performing atleast one of the first etch or the second etch comprises etching thefirst dielectric layer to define a recess in the first dielectric layer.5. The method of claim 1, wherein the first semiconductive layer is asilicon layer.
 6. The method of claim 1, wherein the first dielectriclayer is a silicon nitride layer.
 7. The method of claim 1, comprisingforming a second dielectric layer adjacent a sidewall of the patternedfirst semiconductive layer and adjacent a sidewall of the patternedfirst dielectric layer prior to forming the second semiconductive layer.8. The method of claim 1, comprising removing the patterned firstsemiconductive layer after forming the second semiconductive layer toexpose the patterned first dielectric layer.
 9. The method of claim 8,comprising removing the patterned first dielectric layer to expose asidewall of the second semiconductive layer.
 10. The method of claim 8,comprising forming a second dielectric layer adjacent a sidewall of thepatterned first semiconductive layer and adjacent a sidewall of thepatterned first dielectric layer prior to forming the secondsemiconductive layer.
 11. The method of claim 10, comprising removingthe patterned first dielectric layer and the second dielectric layer toexpose a sidewall of the second semiconductive layer.
 12. A method forfabricating a semiconductor arrangement, comprising: forming a siliconnitride layer; forming a silicon layer over the silicon nitride layer;patterning the silicon layer to form a recess in the silicon nitridelayer and a patterned silicon layer comprising a first silicon structureand a second silicon structure; removing a first portion of the siliconnitride layer between the first silicon structure and the second siliconstructure to expose a first portion of an oxide layer underlying thesilicon nitride layer; forming a second silicon layer over the firstportion of the oxide layer; removing the first silicon structure toexpose a second portion of the silicon nitride layer after removing thefirst portion of the silicon nitride layer; removing the second portionof the silicon nitride layer to expose a second portion of the oxidelayer; and removing the second portion of the oxide layer while aportion of the second silicon layer remains over the first portion ofthe oxide layer.
 13. A method for fabricating a semiconductorarrangement, comprising: forming a first dielectric layer over an oxidelayer; forming a first semiconductive layer over the first dielectriclayer; performing a first etch to form a first semiconductive structureand a second semiconductive structure from the first semiconductivelayer; and performing a second etch to change a cross-sectional profileof the first semiconductive structure, wherein at least one of the firstetch or the second etch forms a recess in the first dielectric layer.14. The method of claim 1, comprising: exposing a top surface of thefirst semiconductive layer after patterning the first semiconductivelayer and before patterning the first dielectric layer, whereinpatterning the first dielectric layer comprises patterning the firstdielectric layer while the top surface of the first semiconductive layeris exposed.
 15. The method of claim 12, wherein removing the firstsilicon structure to expose a second portion of the silicon nitridelayer comprises removing the first silicon structure to expose thesecond portion of the silicon nitride layer after forming the secondsilicon layer.
 16. The method of claim 12, comprising forming adielectric layer adjacent a sidewall of the first silicon structure,wherein forming the second silicon layer comprises forming the secondsilicon layer such that the dielectric layer is between the sidewall ofthe first silicon structure and a sidewall of the second silicon layer.17. The method of claim 16, wherein forming the dielectric layercomprises forming the dielectric layer after removing the first portionof the silicon nitride layer.
 18. The method of claim 16, comprisingremoving the dielectric layer after forming the second silicon layer.19. The method of claim 13, comprising performing a third etch to removea portion of the first dielectric layer and expose a first portion ofthe oxide layer after performing the second etch.
 20. The method ofclaim 19, comprising forming a second semiconductor layer over the firstportion of the oxide layer after performing the third etch.